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High temperature annealing and Cs, O activation is the formations of NEA GaN photocathode of external incentives, GaN material performance of the cathode of the internal factors are fundamental. In this paper, aiming at the difference of the uniform-doping and gradient-doping NEA GaN photocathode in structure, combined with the cathode active changes of the optical current and activated after the...
Research of negative electron affinity GaN ultraviolet photocathode performance parameters on the effect of quantum efficiency is reported. Electronic surface escaping probability is one of the important parameters in comprehensive measure the level of the preparation of GaN optoelectronic cathode.
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