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Lattice‐symmetry‐driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar‐patterned GaN templates using molecular beam epitaxy. High‐resolution transmission electron microscopy confirms that two kinds of lattice‐symmetry, wurtzite (wz) and zinc‐blende (zb), coexist in the GaN nanotripods. Periodical...
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