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Plasma enhanced chemical vapor deposition was used to deposit hydrogenated silicon nitride (SiNx:H) thin films using two gas mixtures: SiH4/NH3 AND SiH4/N2. NH3 and N2 gas flowrates were the only deposition parameters varied. Surface morphology of all the samples was observed with the help of atomic force microscopy (AFM). Fourier transform infrared spectroscopy (FTIR) was utilized to examine the...
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