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This paper focuses on a strained Ge channel N type metal-insulator semiconductor transistor and demonstrates the biaxial compressive strain thin Ge films grown on Si substrates by ultra-high vacuum chemical vapor deposition. The performance enhancement is also exhibited. The drive current and subthreshold swing of the strained Ge transistor is seen to be better than the Si control device. The on-off...
Electron-doped infinite-layer compound Sr1−xLaxCuO2(SLCO) is suitable for fundamental studies and device applications because of the simplest crystal structure and the highest Tc among electron-doped superconducting cuprates. The epitaxially grown c-axis oriented SLCO thin films with Tc of around 40 K were fabricated on the lattice matched substrates like DyScO3 and KTaO3[1]. Since the in-plane coherence...
Flip-chip assembly using anisotropic conductive adhesives (ACAs) has been successfully applied to the achievement of fine pitch electrical interconnections for certain niche applications, particularly flat panel displays. ACAs are an adhesive polymer containing a low volume fraction of conductive particles, which are typically comprised of a polymer core coated with nickel and a thin layer of gold...
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