The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Sub-40nm body-tied FinFET BE-SONOS NAND Flash is studied extensively. BE-SONOS offers efficient hole tunneling erase and excellent data retention. When integrated into a FinFET structure, the inherent field enhancement (FE) effect around the fin tip provides very faster program/erase speed. However, the non-uniform injection around the fin also greatly complicates the operation of FinFET BE-SONOS...
A metal-high-k bandgap-engineered SONOS (MA BE-SONOS) with an additional SiO2 buffer layer is proposed. The thin SiO2 (5 ~ 6 nm) layer between the high-k (Al2O3) and nitride serves to prevent shallow trap generation. Contrary to the previously proposed MANOS or MA BE-SONOS devices using a simple high-k top dielectric, this composite structure eliminates the unstable high-k/nitride interface. Experimental...
A bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005) using Al2O3 top blocking layer and metal gate (MA BE-SONOS) is proposed to provide very fast erase speed without erase saturation. Compared with MANOS (Shin et al., 2005) using a thick (4.5 nm) tunnel oxide, MA BE-SONOS shows dramatically faster erase speed, owing to the help of bandgap engineered ONO barrier that facilitates hole tunneling...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.