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This paper presents a high-speed resonant driver for silicon carbide (SiC) MOSFET, which is based on the class-E inverter. Gate-to-source resistance and input capacitance of SiC MOSFET are included in the resonant circuit of the driver for avoiding the driving-signal strain. Additionally, clamp diodes are added to the output filter in the proposed driver, which makes a square-waveform-like driving...
This paper discusses the development of 5-watts-class flyback converter which can operate at switching frequencies from 1 to 16 MHz. In order to analyze fast switching operations, the input and output voltages with currents are measured for estimating the converter. The self-induced soft switching operation is experimentally investigated at a ringing frequency caused by parasitic components, including...
This paper shows the feasibility of synchronous rectification for SiC MOSFET in dc-dc converter applications. The SiC MOSFET is compared with the conventional Si MOSFET in dc characteristics to the gate voltage for forward and backward direction, at first. Then, their turn-on and turn-off switching characteristics are evaluated in single device operation. Finally, their operations in a practical circuit...
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