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Silicidation of Ni on sulfur implanted Si(100) substrates with different sulfur doses and nickel thicknesses was studied. The location of the NiSi/Si interface with respect to the implantation depth influences the silicide phase formation at a temperature window from 550degC to 700degC. As the NiSi/Si interface is deeper than the maximum implantation peak, NiSi is the dominant phase, independent of...
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