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This paper presents a digital closed loop control method for the sense mode of a mode-matching MEMS vibratory gyroscope. The sense closed loop system reported in our previous work is relatively complex and unreliable due to the existence of notch filter. In this work, a more simple and robust control system is realized with the help of mode-matching control. With a tuning voltage automatically applied...
In this article, Gallium nitride (GaN) cantilevers integrated with AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated with a GaN-on-silicon platform, which is fully compatible with the standard HEMTs fabrication process. A type of micro-bending test was used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. The modulation capability of the AlGaN/GaN heterostructures...
An acceleration latching switch with integrated normally Open/Close paths is presented in this paper. Two arch trusses used as fracture parts of the normally-close path are connected in series to form the normally close path, which will be broken and latched by the latching mechanism to reach the open state once the input acceleration beyond threshold. Moreover, the normally-open path is consisted...
In this paper, a bulk micro machined lateral-axis TFG (tuning fork gyroscope) with improved architecture and combined mechanism sensing capacitors is reported. The combined sensing capacitors make the TFG have high sensitivity and good linearity even under wide input range and fabrication imperfection. Moreover, the decoupled comb drive, together with the improved architecture, can efficiently decouple...
A micro-acceleration latching switch with barb latching mechanism is presented in this paper. The latching mechanism which likes a “barb” can make the switch latch reliably. What's more, the flexible contacts can prevent the switch from opening due to impact resulting from the rebound or vibration of proof mass when the switch is latched. The stops which limit displacement will also improve the reliability...
A novel single mask dry releasing process for making high aspect ratio SOI MEMS devices is presented. The proposed process takes advantage of lag effect in DRIE. The basic idea is that the buried oxide layer is completely removed using the wide trench and releasing holes defined in the first DRIE, then the second DRIE is carried out to released the narrow trenches. Not only stiction problem is avoided,...
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