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A feasibility study of 70 nm pitch 2-level dual damascene interconnects featuring EUV lithography is presented. Using Ru barrier metal and scalable porous silica (Po-SiO, k=2.1), a low resistivity below 4.5 ????cm and a 13% reduction in wiring capacitance compared with porous SiOC (k=2.65) was obtained. The predicted circuit-performance using Po-SiO was 10% higher than that with porous SiOC. The electromigration...
The resistance of wiring with a width of less than 40 nm was firstly evaluated by using an EUV lithography (lambda=13.5 nm). The resistance was quite high in narrow wiring with conventional Ta barrier film, while a very low effective resistivity rhoeff of lower than 4.5 muOmega cm was obtained by using PVD-Ru barrier film. This difference was attributed to combination of thinner barrier metal films...
Variable temperature, MAS and wide-line solid state NMR measurements have been carried out on H 4 Ru 4 (CO) 12 and H 4 Ru 4 (CO) 11 {P(OMe) 3 }. The variation of spin-lattice relaxation time (T 1 ) and linewidth at half intensity (Δv 12 ) of the hydride resonance with temperature for both samples are very similar...
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