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For the first time, we demonstrate standard cell gate density of 3650 KGate/mm2 and SRAM cell of 0.124 mum2 for 32 nm CMOS platform technology. Both advanced single exposure (SE) lithography and gate-first metal gate/high-k (MG/HK) process contribute to reduce total cost per function by 50% from 45 nm technology node, which is unattainable by dual exposure (DE) lithography or double patterning (DP)...
This paper proposes a video scene search system with a sketch query interface, whose search algorithm is based on a stochastic ARG (Attributed Relational Graph) matching. In this system, using the sketch query interface, the user can enter a sketch image as his/her query intuitively for searching scenes of a video. As its preprocessing, the system divides a video into several different scenes by extracting...
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