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The resistance of wiring with a width of less than 40 nm was firstly evaluated by using an EUV lithography (lambda=13.5 nm). The resistance was quite high in narrow wiring with conventional Ta barrier film, while a very low effective resistivity rhoeff of lower than 4.5 muOmega cm was obtained by using PVD-Ru barrier film. This difference was attributed to combination of thinner barrier metal films...
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