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The letter reports the first encouraging results from preliminary aging tests of 1.5 mu m band multiple-quantum-well distributed-feedback laser diodes, grown on InP grating substrate by metalorganic vapour-phase epitaxy. The devices operated stably in 50 degrees C-5 mW-6000 h and 70 degrees C-5 mW-4000 h autopower control accelerated aging tests.<<ETX>>
Extremely narrow spectral-linewidth characteristics in 1.5 mu m GaInAs/GaInAsP separate-confinement-heterostructure (SCH), quantum-well (QW), distributed-feedback, laser diodes (DFB LDs) are reported. Narrower linewidths were obtained in lasers with smaller numbers of quantum wells. Sub-MHz linewidth was achieved for the first time in single laser diodes.<<ETX>>
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