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Internally-matched 4H-SiC MESFET with 4times20 mm of the total gate width was demonstrated. The SiC MESFET structure consists of a channel layer with doping concentration of 2.3times1017 cm-3 and a cap layer with doping concentration of 1.5times1019 cm-3. A lightly p-doped buffer layer was employed between the substrate and the channel layer. Dry etching and high-temperature oxidation were employed...
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