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Photoluminescent porous layers were formed on highly resistive p-type silicon by a metal-assisted chemical etching method using K 2 Cr 2 O 7 as an oxidizing agent. A thin layer of Ag is deposited on the (100) Si surface prior to immersion in a solution of HF and K 2 Cr 2 O 7 . The morphology of the porous silicon (PS) layer formed by this method as a...
A new metal-assisted chemical etching method using Na 2 S 2 O 8 or KMnO 4 as an oxidizing agent was proposed to form a porous silicon layer on a highly resistive p-type silicon. A thin layer of Ag or Pd is deposited on the Si(100) surface prior to immersion in a solution of HF and Na 2 S 2 O 8 or HF and KMnO 4 . The properties of porous...
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