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Flower-like morphology of ZnO thin films were successfully electrodeposited via a one-step route only by changing electrodeposition duration and potential at a fixed concentration on n-Si (100) in 78.10−4 M Zn (NO3)2, 6H2O and 0.1 M KNO3 solution at 70 °C without using any catalyst, additives or seed layer. The as electrodeposited products were characterized by X-ray diffraction, scanning electronic...
In this work, a study on some optical properties of diamond-like carbon (DLC) films is presented. The DLC films have been deposited by DC discharge plasma-enhanced chemical vapor deposition (PECVD). The deposited layers have been characterized by spectrophotometry, ellipsometry and Fourier transform infrared spectroscopy (FTIR) analysis. The result shows that the C–Si ratio evolves with the DLC thickness...
Crystalline silicon carbide thin layers were grown on a p-type Si(100) substrate by pulsed laser deposition (PLD) using KrF excimer laser at λ=248nm from a 6H–SiC hot-pressed target. The target “SiC” used to elaborate our SiC films is realized from a mixture of 1SiO 2 with 3C (carbon) “1SiO 2 +3C” heated in an oven at 2500°C (the target was a hot-pressed material and supplied by Goodfellow)...
In this work, the effect of temperature and time of diffusion on the lithium (Li) profile into p-type highly resistive silicon have been investigated. The high-purity Li metal (99.995%) was deposited onto p-type (111) silicon surface and thermally diffused into the bulk at a 2×10 −6 Torr vacuum pressure. The four-probes technique was used to determine the diffusion profile of Li impurities...
There has been great interest in the last years in gas sensors based on porous silicon (PS). Recently, a gas sensing device based on a hydrocarbon CH x /porous silicon structure has been fabricated. The porous samples were coated with hydrocarbon groups deposited in a methane argon plasma. We have experimentally demonstrated that the structure can be used for detecting a low concentration...
The influence of the initial Si surface state on pore formation has been studied. For this purpose, samples were implanted by phosphorous ions at different doses and energies. Electrochemical characterisations and scanning electron microscopy (SEM) observations were made on phosphorous-implanted p-Si during the first stages of anodisation. After a short anodisation period in HF electrolyte, the topography...
Photoluminescent porous layers were formed on highly resistive p-type silicon by a metal-assisted chemical etching method using K 2 Cr 2 O 7 as an oxidizing agent. A thin layer of Ag is deposited on the (100) Si surface prior to immersion in a solution of HF and K 2 Cr 2 O 7 . The morphology of the porous silicon (PS) layer formed by this method as a...
The electrochemical behavior of p-Si in HF solution by modification of the silicon electrolyte interface is studied. For this purpose, the samples were coated with titanium carbide (TiC) deposited by RF pulverization of titanium under methane/argon atmosphere. The current-potential characteristics of TiC-coated electrodes in 5% HF are similar to the ones obtained with silicon. The scanning electron...
A photoelectrochemical study is performed on a thermally oxidized n-Si electrode in acetonitrile in the presence of a redox couple dimethylferrocene (DMFc). An oxide layer of 3nm thickness has been formed at 400 o C. The results show that upon ageing the oxidized electrode in the electrolyte, its flatband potential is constant and only a decay of the current with time is observed: the oxide...
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