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In this paper, we present a simple and accurate method to extract the parasitic as well as the intrinsic components of a Bulk FinFET device. Based on the Y- parameter data obtained from the 3-dimensional device simulator Sentaurus TCAD, the parasitic components are de-embedded and an accurate modeling based on the equivalent small signal circuit is presented to extract the intrinsic parameters. The...
An analytical sub-threshold surface potential model for double gate MOSFET (DG-MOSFET) is presented incorporating the edge effects at the source and drain ends. As the gate length of DG MOSFETs is scaled down, the barrier lowering becomes very important. A fitting parameter α is introduced to compensate this effect. The results obtained with this modeled equation are well matched with the results...
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