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In this study, a look up table (LUT) is developed to extract the intrinsic RF parameters of underlap DG MOSFET (UDG-MOSFET) including the non-quasi-static (NQS) effect. The LUT-based approach proposed; can accurately extract complex RF parameters of UDG-MOSFET under different bias conditions, necessary for RF circuit simulations by an interpolation algorithm. The RF parameters including intrinsic...
In this paper, we present a simple and accurate method to extract the parasitic as well as the intrinsic components of a Bulk FinFET device. Based on the Y- parameter data obtained from the 3-dimensional device simulator Sentaurus TCAD, the parasitic components are de-embedded and an accurate modeling based on the equivalent small signal circuit is presented to extract the intrinsic parameters. The...
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