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In this work, we present an analytical model for studying the sub-threshold charge leakage in nanocrystal embedded gate dielectric DGMOSFET Non Volatile Memories. From a parabolic approximation based method, we evaluate the surface potential and the threshold voltage in such a device. Thereafter using the WKB approximation, the charge leakage from the nanocrystal layer to the Si substrate under sub-threshold...
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