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To achieve a better material for uncooled infrared (IR) detector, polycrystalline VO2(B) thin films with layered W-doping were fabricated on Si substrates by magnetron sputtering, and the best temperature coefficient of resistance (TCR) value reached −4.1%/K. The film synthesis was in a two-step route, first deposition at room temperature and then post-deposition annealing at 450 °C, to better control...
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