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An 8-wavelength light source for silicon WDM transceiver was developed using an AlGaInAs DFB laser array integrated with tapered-SOA and precise flip-chip bonding technology. The device demonstrated high Si-waveguide-coupled output powers of >+2.3dBm/ch under 8-ch simultaneous operation at 70°C.
A modulator with an enhanced efficiency by cascaded microring resonators (MRRs), and a single-mode laser with a wavelength determined by a MRR wavelength filter were integrated on a Si chip to demonstrate for the first time wavelength-tuning-free 10-Gb/s modulation over a wide range of temperature.
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