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Cu2ZnSnSe4 (CZTSe) thin films were deposited by RF sputtering method at different substrate temperatures, followed by an annealing step in SnSe2. It was found that the substrate temperature significantly affected phase structure and surface morphology of the precursor films. The annealed films show better crystallinity than the precursors. Single kesterite CZTSe phase was observed when the annealing...
In 2 Se 3 is one of the most significant n-type layered semiconductor belonging to III–VI binary compound materials. In this paper, polycrystalline In 2 Se 3 films were obtained by magnetron radio-frequency (RF) sputtering. The as-deposited films were analyzed by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and optical measurements...
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