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We report the synthesis of GaAsBi nanowires using Bi as catalyst. Nanoislands of bismuth are grown on GaAs substrates by atmospheric pressure metalorganic vapor phase epitaxy, these acts appear as local points of the nucleus for the growth of the GaAsBi nanowires. Catalysis by the metal droplet can make growth possible at low temperatures. Surface morphology of the elaborated samples is investigated...
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