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We have investigated in situ monitoring of growth rate and refractive index by laser reflectometry during InGaAs on GaAs (001) substrate growth in atmospheric pressure metalorganic vapour-phase epitaxy (AP-MOVPE). The indium solid composition (x Ins ) was varied by changing the substrate temperature or the indium vapour composition (x Inv ). The refractive index of InGaAs...
InGaAs layers on undoped GaAs (001) substrates were grown by atmospheric pressure metalorganic vapour phase epitaxy (AP-MOVPE). In order to obtain films with different indium composition (x In ), the growth temperature as a growth parameter, was varied from 420 to 680°C. Furthermore, high-resolution X-ray diffraction (HRXRD) measurements were used to quantify the change of x In . Crystal...
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