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This work presents a planar, longitudinal mode ultrasonic scalpel microfabricated from monocrystalline silicon wafers. Silicon was selected as the material for the ultrasonic horn due to its high speed of sound and thermal conductivity as well as its low density compared to commonly used titanium based alloys. Combined with a relatively high Young’s modulus, a lighter, more efficient design for the...
The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially...
The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen...
AES (Auger electron spectroscopy) and EELS (electron energy loss spectroscopy) have been used to study the first stages of the Al 2 O 3 /Si and Al 2 O 3 /InP interfaces formations. Alumina was condensed using an evaporation cell heated by an electronic bombardment. InP is one of the most promising materials for applications in high speed and optoelectronic devices,...
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