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Electron spectroscopy (AES and XPS) and photoluminescence analysis (PL) were used to study porous layers elaborated by electrochemical etching of p-GaAs and n-InP substrates. Surface characterizations have been performed on the as received porous substrates, ions bombarded and nitridated porous layers. Porous surfaces of GaAs(100) and InP(100) have been compared after different treatments: Argon ion...
Nitridation of indium phosphide (100) substrates has been studied using Auger electron spectroscopy and electron energy loss spectroscopy. After ionic etching by Ar + ions, metallic indium crystallites are created, and the nitridation of the substrate is performed using a plasma glow discharge cell. We have found that N atoms lead to the desorption of the phosphorus diffused on the surface...
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