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We estimate the effects of random discrete dopants (RDs) and random interface traps (ITs) on physical and electrical characteristic fluctuations of 16-nm-gate high-κ/metal gate (HKMG) metal–oxide-semiconductor field effect transistors (MOSFETs). Two-dimensional (2D) random ITs at the hafnium oxide (HfO 2 )/silicon interface and 3D RDs inside the silicon channel of the 16-nm-gate HKMG MOSFETs...
We study effects of interface traps (ITs) and random dopants (RDs) on 16-nm high-κ/metal gate MOSFETs. Totally random generated devices with 2D ITs at the HfO2/silicon oxide interface as well as 3D RDs inside the channel are simulated. Fluctuations of threshold voltage, on/off state current and gate capacitance of the tested devices are estimated and discussed. The results indicate the aforementioned...
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