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Stoichiometric and amorphous Er 2 O 3 films were deposited on Si(001) substrates by radio frequency magnetron technique. Spectroscopic ellipsometry measurement showed that the refractive index of the Er 2 O 3 film in wavelength region of 400–1000 nm was between 1.6–1.7. The reflectivity of the Er 2 O 3 films decreased greatly with respect to that from...
Synchrotron radiation photoemission spectroscopy was used to study the formation process of Er 2 O 3 /Si(001) interface and film during epitaxial growth on Si. A shift in the O core-level binding energy was found accompanied by a shift in the Er 2 O 3 valence band maximum. This shift depended on the oxide layer thickness and interfacial structure. An interfacial layer...
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