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Dopant redistribution in a silicon nanowire (SiNW) p–n junction is found to occur owing to self-heating effects. A SiNW is doped to form back-to-back diodes and is thermally isolated by an oxide layer on its bottom side and by air on the other sides. When a high level of current flows, the inner body temperature is found to increase enough to cause dopant diffusion and even to reach the silicon melting...
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