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Transcranial Magnetic Stimulation (TMS) is a non-invasive, safe and promising therapy for neurological conditions which utilizes transient magnetic fields for inducing electric field in the brain.
The internal parasitic bipolar transistor plays an important role in the unclamped inductive switching (UIS) failure of superjunction MOSFET. To suppress the activation of parasitic transistor, an innovative structure was proposed which features a P-island with relatively high doping concentration at the top of P-column and a trench-type P+ contact. The avalanche point is localized at the P-island...
In this paper, the breakdown characteristic of glycerol acted by high voltage pulse with positive and negative polarity under different pressures and temperatures was researched experimentally. A coaxial voltage withstanding device for high voltage breakdown test was well designed and manufactured. The polarity test results of glycerol show that, at the temperature of 25 D, the averaged positive and...
A novel silicon-on-insulator (SOI) high figure-of-merit vertical double diffused MOSFET (VDMOS) structure and its breakdown mechanism are presented in this paper. The structure is characterized by oxide trenches on the top interface of the buried oxide layer on partial SOI (TPSOI). The accumulation charges located in the trenches enhance the electric field in the buried oxide layer and uniform the...
A new superjunction LDMOS on silicon-on-insulator (SOI) with a nondepletion compensation layer (NDCL) is proposed. The NDCL can be self-adaptive to provide additional charges for compensating the charge imbalance while eliminating the substrate-assisted depletion effect. In addition, the high-density oxide interface charges at the top surface of the buried oxide layer (BOX) enhance the electric field...
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