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A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25µm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8–2.2 dB has been measured at 26–32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP1dB) is −11dBm and input IP3 is −1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including...
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