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In this paper, the degradation of hydrogenated amorphous silicon thin film transistors under a self-heating stress (SHS) condition is investigated by analyzing the capacitance–voltage characteristics of gate-to-drain capacitance (C gd ) and gate-to-source capacitance (C gs ). The very different characteristics of C gd –V g and C gs –V g show different...
The threshold voltage (V t ) instability of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is investigated under drain bias dependent bias temperature stress (V D -BTS). The drain bias reduces the overall gate overdrive stress and leads to a position-dependent V t -shift (ΔV t ) with maximum ΔV t at the source-end and minimum ΔV t ...
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