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Single-event multiple transients (SEMTs) are investigated using an on-chip self-triggered circuit. Measured results for inverter chains of two layout designs, including a guard-ring design and a conventional design, are compared under pulsed laser and heavy-ion (Bi) irradiations. Pulsed laser exposures of different energies and Bi heavy-ion irradiation at different injection angles, including along...
AlGaN / GaN high electron mobility transistors (HEMTs) were exposed to 800MeV Bi ions with fluence up to 5×107 ions/cm2 at the Heavy Ion Research Facility in Lanzhou (HIRFL) Cyclotrons in Institute of Modern Physics, Chinese Academy of Sciences. Test results show that the drain current Id and the maximum transconductance gmax decreased by 6.8 % and 3.2% respectively, while the gate leakage current...
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