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We report on the fabrication of AlGaN‐based pseudomorphic light‐emitting diodes over sapphire substrate with peak emission at 275 nm. A 0.6 µm thick n‐AlGaN contact layer was grown using a novel pulsed silicon modulation doping technique, which enabled us to achieve a sheet resistance of ∼500Ω/□. In order to mitigate current crowding and Joule heating issues, we implemented the pixel‐LED design with...
We report a new approach of pulsed modulation doping (PMD) to achieve n‐type doping in AlxGa1‐xN (x>0.6) layers. In this approach silane flow is cyclically modulated during n‐AlGaN growth which enable us to grow low dislocation density n‐AlGaN templates for UV (λ ∼ 280 nm) LEDs. We observed that dislocation density for un‐doped AlGaN layers on high quality AlN layers is 3.3×108cm‐2. This dislocation...
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