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Pr0.5Ca0.5MnO3 (PCMO) films were deposited on LaAlO3 (100) substrates changing process pressure from 1.33 to 5.33Pa by RF magnetron sputtering. Current–voltage characteristic measurements and spectroscopic ellipsometry measurements were carried out to investigate the mechanism of resistance switching in PCMO films. Resistance switching was observed in the devices composed of the PCMO films deposited...
Film deposition mechanisms were investigated in capacitively-coupled plasmas of fluorocarbon (C 4 F 8 , C 3 F 6 and C 5 F 8 ) gases. In a C 5 F 8 plasma, slightly fluorine-rich film was obtained and the deposition rate was twice as large as those in C 4 F 8 and C 3 F 6 plasmas. In order to understand such...
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