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The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular case of the SOI MOSFET. The second part reviews compares and scrutinizes various methods to extract the threshold voltage, the effective channel and the individual values of drain and source resistances. These are important device parameters for modeling and circuit simulation.
A simple and continuous analytical approximation for the equation of an ideal diode with a series resistance and shunt conductance is proposed. When compared to the exact numerical solution, the approximate expression produces relative errors smaller than 3%, for any values of series resistance and shunt conductance.<<ETX>>
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