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In recent years increasing demand for hybrid electric vehicle has generated the need for reliable and low-cost high-temperature electronics which can operate at the extreme temperatures that exists under the hood. A high-voltage and high-temperature gate-driver integrated circuit for SiC FET switches is designed and implemented in a 0.8-micron Silicon-on-Insulator high-voltage process. First prototype...
A high-voltage and high-temperature gate-driver chip for SiC FET switches is designed and fabricated using 0.8- micron, 2-poly and 3-metal BCD on SOI process. It can generate output voltage swing from -5 V to 30 V and can operate up to 175degC ambient temperature. This gate-driver chip is intended to drive SiC power FETs in DC-DC converters in a hybrid electric vehicle. The converter modules along...
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