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Single crystals of 6H–SiC were irradiated at room temperature with 20MeV carbon ions at fluences of 1.5×1015 and 6.0×1015cm−2. Raman measurements were performed to study irradiation induced damage and the in-depth damage profile of SiC. A clear change of damage from the surface down to the stopping region of carbon ions as simulated by SRIM is exhibited. The affected area as detected by Raman is in...
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