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In this paper, we show the junctionless nanowire FETs (JNTs) with gate length of 20 nm and the conventional inversion mode nanowire FETs (cINTs). The fabricated JNT has shown better electrical characteristics with high Ion / Ioff ratio (>106) and subthreshold slope (∼75 mV/dec) than cINT, which means that the simpler fabrication process without junction formation makes the JNT a promising candidate...
In this paper, the C-V and I-V characteristics of Si-nanowire FET are presented. From the C-V data, the effects of undoped floating channel on the Si-nanowire FET are analyzed. Also, the intrinsic channel capacitance and mobility therein are extracted accurately by eliminating the effect of parasitic capacitances. Moreover, the I-V data free from the effect of the series resistance are obtained and...
DNA microarray technology relies on affinity between complementary nucleic acids to detect the presence and estimate the amounts of target molecules of interest. Molecular binding is stochastic in nature, having inherent uncertainty manifested as Poisson noise. This, along with interference due to non-specific binding, are among the main obstacles for achieving high accuracy of DNA microarrays. In...
In this paper, we introduce the cylindrical coordinate based flicker noise model for Silicon NanoWire Field Effect Transistor (Si-NWFET) with Gate-All-Around (GAA) structure. For the accurate extraction of the volume trap density, Nt, with 1/f noise modeling, the parameters which represent the intrinsic channel properties are determined by rejecting the series resistance Rsd effect. Due to the random...
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