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Thin ZrC films (<500 nm), grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser, were irradiated by 800 keV Ar ion at room temperature under a fixed flux of 1011 cm2 s−1 with fluences ranging from 1 × 1014 at/cm2 to 2 × 1015 at/cm2. Glancing incidence X-ray diffraction, X-ray reflectivity, transmission electron...
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