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We have successfully prepared wurtzite (Ga,Mn)N epitaxial layers using RF-plasma-assisted molecular beam epitaxy. Highly resistive (Ga,Mn)N epilayers show primarily paramagnetic behavior. The results of compositional, electronic and magnetic characterizations on the epilayers suggest that 60% of Mn content in the epilayers substitute for Ga on sub-lattice sites. For epilayers with very high Mn concentrations...
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