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An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4" wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.
An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state...
We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs). The epitaxial growth, as well as the HEMT process, was performed simultaneously. When integrated in a 4–8 GHz 3-stage LNA at 300 K, the measured average noise temperature was...
The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 °A/mm to 7 °A/mm at −1 V gate bias.
A 0.5–13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP HEMT process. A packaged LNA has been measured at both 300 K and 15 K. At 300 K the measured minimum noise temperature was 48 K at 7 GHz. At 15 K the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5–13 GHz band. The gain was between 34 dB and 40 dB at 300 K and...
We present in this letter an InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT) with record noise temperature at very low dc power dissipation. By minimizing parasitic contact and sheet resistances and the gate current, a 130-nm-gate-length InP HEMT was optimized for cryogenic low-noise operation. When integrated in a 4- to 8-GHz three-stage hybrid low-noise amplifier operating at 10 K,...
In this talk, we report on a pair of monolithically integrated multi-wavelength transmitter and receiver PICs employing polarization multiplexing and quadrature phase-shift keying modulation to provide an aggregate bandwidth greater than 1Tbps on a single chip.
A 10-wavelength, polarization-multiplexed, monolithically integrated InP transmitter PIC is demonstrated for the first time to operate at 112 Gb/s per wavelength with a coherent receiver PIC.
We report on the current state of large-scale and high functionality photonic integrated circuits on the InP platform for transmitters, receivers, and other device applications.
We report on the current state of large-scale and high functionality photonic integrated circuits on the InP platform for transmitters, receivers, and other device applications.
For more than 30 years, III-V materials and associated transistors or integrated circuits aroused of numerous studies to achieve today an industrial reality with the availability of a panel of high performance technologies. For the development of these III-V technologies, there was no established roadmap; the line of sight was essentially the increase of the operating frequency limit (more than 300GHz)...
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