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Microwave absorbing composites are of considerable importance in vacuum electronics, and therefore present an opportunity for further research. The synthesis and complex dielectric properties of new types of transition metal spinel-based microwave absorbing composites with unusual frequency responses are described. Also presented are improved dielectric measurements of more traditional BeO-SiC absorbers.
We have proposed and developed a test structure for evaluating electrical characteristics variability of a large number of MOSFETs in very short time using very simple circuit structure. The electrical characteristics such as threshold voltage, subthreshold swings S-factors, random telegraph signal noise, and so on, can be measured in over one million MOSFETs. This new test structure circuit and results...
To suppress Random Telegraph Signal (RTS) noise in MOSFETs, it is necessary to understand the phenomena of RTS. We can extract the accurate time constant in RTS noise by measuring a huge number of MOSFETs during a long time. Time constant is useful to obtain the energy level. In this paper, we demonstrated the statistical and accurate measurement method of the time constant of RTS by a sufficient...
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential...
This paper studies the density-of-localized gap states (DOS) for RF sputter amorphous InGaZnO (a-IGZO) as determined from temperature dependent study of the a-IGZO thin film transistor (TFT) electrical properties. Measurements were performed on inverted-staggered RF sputter a-IGZO TFTs. The drain current (ID) versus the gate-to-source voltage (VGS) at different temperatures from 30degC up to 90degC...
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