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Silicon quantum dots are attractive candidates for the development of scalable, spin‐based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here, we report on transport experiments in double gate nanowire transistors issued from a complementary metal–oxide–semiconductor (CMOS) process on 300 mm silicon‐on‐insulator wafers...
Strain boosters are an effective way to improve performances in advanced CMOS FDSOI devices. Hole mobility is higher in pFETs with compressive channels. Meanwhile, electron mobility is higher for nFETs with tensile channels. We present an alternative technique to blanket sSOI substrates. The efficiency of the “Strained Silicon by Top Recrystallization of Amorphized SiGe on SOI” technique has been...
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