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Control and mechanism analysis of a Ge quantum dot (QD) formation on a Si(100) substrate by using carbon (C)-mediated c(4 × 4) surface reconstruction (SR) and solid-phase epitaxy (SPE) methods is demonstrated. The Si surface was reconstructed via the formation of C–Si bonds before Ge deposition in the SR method, while the QDs were formed by annealing of an amorphous Ge/C/Si heterostructure in the...
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