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An effect of Si(100)-c(4×4) surface reconstruction by using sub-monolayer carbon reaction was investigated to form Ge dots on a Si (100) substrate. Samples were prepared by a solid-source molecular beam epitaxy system with an electron beam gun for carbon (C) sublimation and a Knudsen cell for Ge evaporation. C of 0.1 to 0.5ML was deposited on Si (100) at the substrate temperature of 200˚C, followed...
To form small and dense Ge dots, an availability of simple bottom-up method by using reaction of Ge and carbon (C) formed on Si(100) at low temperature through post-annealing has been investigated. Ge dots were formed at annealing temperature (TA) above 450°C. Small, dense and relatively uniform dots were formed for Ge=7.5MLs and C=0.05–0.1ML at TA=650°C. From the dependence of dot size and density...
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