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We propose novel integrable 80V silicon lateral trench power MOSFETs with low Figures of Merit (Ron times Qg and Ron times Qgd) proving very attractive for high frequency DC- DC converter applications. The performance of these lateral trench power MOSFETs was simulated using a 2-D device simulator, and an analytical model was developed and implemented in MAST HDL. Circuit simulations indicate a 4X...
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