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We have systematically studied C- and Si-face n-4H-SiC wafers before and after the growth of epitaxial layers using an optical Nomarski microscope (ONM) and an atomic force microscope (AFM). In particular, a number of defects such as micropipes, microtubes, threading edge dislocations, and screw dislocations are identified in H 2 etched C-face and Si-face SiC wafers. The properties of ohmic...
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