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We report on the achievement of InGaN/GaN dot-in-a-wire phosphor-free white light-emitting diodes, which can exhibit a record internal quantum efficiency of ∼57% and virtually zero efficiency droop for injection currents up to ∼2,200 A/cm2.
We report on the achievement of a record high internal quantum efficiency in InGaN/GaN dot-in-a-wire light emitting diodes by significantly reducing the electron overflow and enhancing the hole transport in the device active regions.
We report on the achievement of self-organized InAs/InP quantum dot tube nanoscale ring resonators, with a wall thickness of ~70nm and diameter of ~4-5μm, that can exhibit strong coherent emission at ~1.55μm.
A record high internal quantum efficiency of 36.7% was achieved for nanowire LEDs by using InGaN/GaN dot-in-a-wire heterostructures. The devices can exhibit strong green, red, and white emission, depending on the dot sizes and compositions.
This paper discusses micro-and nanoscale coherent light sources, with controlled emission wavelength, direction and polarization, which have important applications in chip-level optical communications, biosensing, and quantum information processing. This paper reports about free-standing microbelt-like optical cavities by embedding a ridge-waveguide in a rolled-up tube structure, formed when a coherently...
In this report we study the nanoscale coherent light sources on GaAs and Si using single rolled-up InGaAs/GaAs quantum dot microtubes. Such microtubes are formed by self-rolling of coherently strained InGaAs/GaAs quantum dot heterostructures through controlled release from their host substrates [1-3]. We have developed a substrate-on-substrate transfer process [3] and realized nearly defect-free quantum...
In this paper, we have performed a detailed investigation of the cathodoluminescence characteristics of InGaAs/GaAs QD microtube ring resonators fabricated by a single-step lithography process. We have unambiguously demonstrated that self-organized QD layers embedded in rolled-up microtube structures can exhibit significantly improved luminescence efficiency, compared to the as-grown layers. In addition,...
Self-organized In(Ga)As/Ga(Al)As quantum dots have emerged as useful nanostructures that can be epitaxially grown and incorporated in the active region of devices. The near pyramidal dots exhibit properties arising from the three-dimensional quantum confinement and from the coherent built-in strain. The properties and current state-of-the-art characteristics of quantum-dot junction lasers, intersublevel...
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