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We report on the achievement of self-organized InAs/InP quantum dot tube nanoscale ring resonators, with a wall thickness of ~70nm and diameter of ~4-5μm, that can exhibit strong coherent emission at ~1.55μm.
This work achieved, for the first time, lasing in rolled-up semiconductor tubes at room temperature. The devices are characterized an ultralow threshold power (~ 4 ??W), an intrinsic lasing linewidth of ~ 0.2 0.3 nm, and a linear polarization with the electric field parallel to the tube surface.
In this report we study the nanoscale coherent light sources on GaAs and Si using single rolled-up InGaAs/GaAs quantum dot microtubes. Such microtubes are formed by self-rolling of coherently strained InGaAs/GaAs quantum dot heterostructures through controlled release from their host substrates [1-3]. We have developed a substrate-on-substrate transfer process [3] and realized nearly defect-free quantum...
We have achieved superior quality non-tapered InN nanowires on Si(111) by molecular beam epitaxy, which are free of dislocations and exhibit bright photoluminescence at room-temperature and significantly reduced spectral broadening (linewidth~18.5 meV at 77 K).
In this context, we have investigated the growth kinetics and characteristics of metamorphic InAs QD lasers on GaAs, wherein special techniques of p-doping and tunnel injection are incorporated. As a result, we have realized high quality InAs QDs on GaAs that are comparable, in both photoluminescence (PL) intensity and linewidth (~30 meV), to state-of-the-art 1.1 and 1.3 μm InAs pseudomorphic QDs...
We have investigated the molecular beam epitaxial growth and characteristics of p-doped InAs tunnel injection quantum dash lasers on InP (001) substrates. Significantly improved photoluminescence intensity and narrow linewidth (~ 50 meV) are measured from multiple InAs quantum dash layers grown under optimized conditions. The lasers are characterized by very large T0 (204 K), large modulation bandwidth...
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