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GaAsN thin films were grown by chemical beam epitaxy using monomethylhydrazine ((CH3)N2H3) as the N sources, and the role of the nitrogen (N) and impurities (hydrogen (H), carbon (C)) on free carrier concentration was investigated. The N, H, and C concentrations increased with decreasing growth temperature. GaAsN thin film grown at 470degC was n-type conduction, and the donor is thought to be the...
Crystal quality of GaAsN films can be improved by using chemical beam epitaxy method for low-temperature growth. However, low-temperature growth increases carbon (C) incorporation in the films, which degrades their electrical properties. To reduce the C concentration in the films, C incorporation process was investigated in view of the surface reaction of nitrogen (N) sources on a substrate surface,...
GaAsN epitaxial thin films were grown on GaAs (001) substrate by chemical beam epitaxy with dimethylhydrazine ((CH3)2 N2H2). In the dependence of growth temperature on the N concentration, there were three distinct regions in which the dependence was different. At the growth temperature of 420degC, the N concentration increased with increasing surface step density that corresponds to misorientation...
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